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IRF200P223

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Product Details
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature: -
Vgs(th) (Max) @ Id: 4V @ 270µA
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 60A, 10V
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 10V
Package: Tube
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Product Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 5094 pF @ 50 V
Mounting Type: Through Hole
Series: StrongIRFET™
Supplier Device Package: TO-247AC
Mfr: Infineon Technologies
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Power Dissipation (Max): 313W (Tc)
Technology: MOSFET (Metal Oxide)
Base Product Number: IRF200
Description: MOSFET N-CH 200V 100A TO247AC
Description
N-Channel 200 V 100A (Tc) 313W (Tc) Through Hole TO-247AC

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