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IPA90R1K0C3XKSA1

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Product Details
Product Category : MOSFET
Vgs (Max) : ±20V
Current - Continuous Drain (Id) @ 25°C : 5.7A (Tc)
FET Type : N-Channel
Mounting Type : Through Hole
Gate Charge (Qg) (Max) @ Vgs : 34nC @ 10V
Manufacturer : Infineon Technologies
Minimum Quantity : 1
Drive Voltage (Max Rds On, Min Rds On) : 10V
Operating Temperature : -55°C ~ 150°C (TJ)
FET Feature : -
Series : CoolMOS™
Input Capacitance (Ciss) (Max) @ Vds : 850pF @ 100V
Supplier Device Package : PG-TO220-FP
Part Status : Not For New Designs
Packaging : Tube
Rds On (Max) @ Id, Vgs : 1 Ohm @ 3.3A, 10V
Power Dissipation (Max) : 32W (Tc)
Package / Case : TO-220-3 Full Pack
Technology : MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id : 3.5V @ 370µA
Drain to Source Voltage (Vdss) : 900V
Description: MOSFET N-CH 900V 5.7A TO220-3
Description
The IPA90R1K0C3XKSA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new ...

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